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 Professor 

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Gil-Ho Kim

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Office: 23210, 1st Engineering Building

Address: (16419) School of Electronic Electrical Engineering, Sungkyunkwan University, Suwon, Korea​

ghkim-at-skku.edu

2002 -                  Professor, School of Electronic and Electrical Engineering and Sungkyunkwan ​                                             Advanced Institute of Nanotechnology (SAINT),  Sungkyunkwan University (SKKU)

1999 - 2002        Senior Researcher, Electronics and Telecommunications Research Institute                                                   (ETRI), Korea                         

1993 - 1998        PhD Semiconductor Physics Group, Department of Physics/Cavendish                                                           Laboratory, University of Cambridge, UK

1990 - 1992        MEd Physical Education, Hanyang University, Korea

1981 - 1985        BS Physics, Hanyang University, Korea

Research Professor

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atif.khan@mail.au.edu.pk

PhD: Muhammad Atif Khan 

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Working: Assistant Professor,  Air University, Pakistan  

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  • Fall 2024-              Research Professor Electrical and Computer Engineering, Sungkyunkwan                                             University (SKKU), Korea

  • 2018 - 2024

  • 2014 - 2018          MS/PhD Electronic Engineering, Sungkyunkwan (SKKU), Korea

  • 2007 - 2011          BS Electrical,  UET Peshawar, Pakistan

 Publications

  • Muhammad Atif Khan et al. "Study of oxygen plasma induced modulation of photoconductivity in MoS2 field effect transistor" Superlattices and Microstructures 142, 106507 (2020)

  • Muhammad Atif Khan et al. "High performance self-gating graphene/MoS2 diode enabled by asymmetric contacts" Nanotechnology 29, 395201 (2018) 

  • Muhammad Atif Khan et al. "Tunable electron and hole injection enabled by atomically thin tunneling layer for improved contact resistance and dual channel transport in MoS2/WSe2 van der Waals heterostructure" ACS Appl. Mater. Interfaces 10, 23961 (2018)

  • Muhammad Atif Khan et al. "Gate Tunable Self-Biased Diode Based on Few Layered MoS2 and WSe2" ACS Chemistry of Materials, January (2018)

  • Muhammad Atif Khan et al. "Junctionless Diode Enabled by Self-Bias Effect of Ion Gel in SingleLayer MoS2 Device " ACS App. Mat. and Int. 0, 26983-26989 (2017)

  • Muhammad Atif Khan et al. "P-doping and efficient carrier injection induced by graphene oxide for high performing WSe2 rectification devices " Applied Physics Letters 108, 093104 (2016)

  • Inayat Uddin et al. "Gate-Tunable Negative Differential Resistance in WSe2/h-BN/Graphene Heterostructure" ACS Applied Nano Materials 8, 1, 535–542 (2025)

  • Inayat Uddin et al. "Enhanced Photoresponse of VO2 Nanowires by Surface Doping with Au Nanoparticles via Dielectrophoresis Method" Physica Status Solidi B 2400432 (2025)

  • Nhat Anh Nguyen Phan et al. "Electrostatic control of transconductance oscillations in MoS2/WSe2 heterostructure" Nanotechnology 36 185001 (2025)

  • Muhammad Atif Khan et al. "Transport properties of graphene/MoS2 heterostructure device in the low carrier density regime at cryogenic temperatures". Applied Physics Letters 126, 133504 (2025)

 Master/PhD Students

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Le Thi Hai Yen

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Address: (83209) 2nd Research Complex, Sungkyunkwan University, Suwon, Korea

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  • Fall 2019 -      MS/PhD  Sungkyunkwan Advanced Institute of  Nanotechnology (SAINT),                                                    Sungkyunkwan University (SKKU), Korea                                   

  • 2015 - 2019    BS Physics, VNU University of Science, Vietnam National University, Hanoi

haiyenlt-at-skku.edu 

   Publications​

  • Hai Yen Le Thi et al. "High performance ambipolar MoS2 transistor enabled by indium edge contacts" Nanotechnology 32, 215701 (2021)

  • Hai Yen Le Thi et al. "Self-forming p-n junction diode realized with WSe2 surface and edge dual contacts" Small 18, 2204547 (2022)

  • Hai Yen Le Thi et al. "Doping-Free High-Performance Photovoltaic Effect in a WSe2 Lateral p-n Homojunction Formed by Contact Engineering" ACS Applied Materials & Interfaces 15, 29, 35342-35349 (2023)

  • Hai Yen Le Thi et al. "Controlled Charge Polarity in WSe2 Field-Effect TransistorGrown by Self-Flux Method" Physica status solidi (b) 2400436 (2024)

  • Hai Yen Le Thi et al. "Negative differential transconductance phenomenon in MoSe2/h-BN/WSe2 vertical structure" Applied Materials Today 44, 102725, (2025)

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Phan Nguyen Nhat Anh 

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  • Spring 2020 -     MS/PhD Electrical and Computer Engineering, Sungkyunkwan University, Korea 

  • 2014 - 2019        BS Mechanical Engineering (Advanced Materials), University of Technology,                                                    Ho Chi Minh City, Vietnam

nhatanh-at-skku.edu

   Publications​

  • Nhat Anh Nguyen Phan et al. "Enhanced performance of WS2 field-effect transistor through mono and bilayer h-BN tunneling contacts" Small 18, 2105753 (2022)

  • Nhat Anh Nguyen Phan et al. "Exploring Electrostatic Confinement Transport in MoS2/WSe2 Heterostructure via Triple-Gated Point Contact Device" Advanced Materials Technologies 202302200 (2024).

  • Nhat Anh Nguyen Phan et al. "Multilayer Black Phosphorus/Hexagonal Boron Nitride/GrapheneHeterostructure Metal−Insulator−Semiconductor Diode" ACS Applied Nano Materials 7, 23, 27217–27223 (2024)

  • Nhat Anh Nguyen Phan et al. "Electrostatic control of transconductance oscillations in MoS2/WSe2 heterostructure" Nanotechnology (2025)

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Inayat Ud Din

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  • Spring 2020 -      MS/PhD Electrical and Computer Engineering, Sungkyunkwan University, Korea              

  • 2010 - 2015         BS Electrical Engineering, University of Engineering and Technology (UET), Taxila,                                          Pakistan

inayatuddin-at-skku.edu

   Publications​

  • Inayat Ud Din et al. "MoTe2-Based Schottky Barrier Photodiode Enabled by Contact Engineering" ACS Applied Nano Materials 6, 445-452 (2023)

  • Inayat Ud Din et al. "Gate-Tunable Negative Differential Resistance in WSe2/h-BN/Graphene Heterostructure"ACS Applied Nano Materials 8, 1, 535–542 (2025)

  • Inayat Ud Din et al. "Enhanced Photoresponse of VO2 Nanowires by Surface Doping with Au Nanoparticles via Dielectrophoresis Method" Physica status solidi (b) 2400432 (2025)

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AmirHossein Nazarian-Firouzabadi

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  • Spring 2024 -          MS/PhD Electrical and Computer Engineering, Sungkyunkwan University, Korea  

  • 2019 - 2024             BS from Isfahan University of Technology 

amir.1400-at-skku.edu

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Yuhui Chen

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  • Spring 2025 -          PhD Electrical and Computer Engineering, Sungkyunkwan University, Korea  

  • 2022 - 2024             MS from China Agricultural University, China

  • 2016 - 2020             BS from Chongqing University of Posts and Communications, China

-at-skku.edu

Secretary

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Jo Min Joo

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  • Office: 23230, 1st Engineering Building

  • Address: (16419) School of Electronic Electrical Engineering, Sungkyunkwan University, Suwon, Korea

okay8457-at-skku.edu

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