School of Electronic & Electrical Engineering, College of Information & Communication Engineering
Sungkyunkwan Advanced Institute of Nanotechnology (SAINT)
2024 / 2023 / 2022 / 2021 / 2020 / 2019 / 2018 / 2017 / 2016 / 2015 / 2014 / 2013 / 2012 / 2011 / 2010 / 2009-2003 / 2002-1994
2024
Nhat Anh Nguyen Phan, Inayat Uddin, Hai Yen Le Thi, Nobuyuki Aoki, Hye Jung Kim, Kenji Watanabe, Takashi Taniguchi, and Gil-Ho Kim*
Advanced Materials Technologies 2302200 (2024)
2023
Doping-Free High-Performance Photovoltaic Effect in a WSe2 Lateral p‑n Homojunction Formed by Contact Engineering
Hai Yen Le Thi, Tien Dat Ngo, Nhat Anh Nguyen Phan, Hoseong Shin, Inayat Uddin, Venkatesan A, Chi-Te Liang, Nobuyuki Aoki, Won Jong Yoo, Kenji Watanabe, Takashi Taniguchi, and Gil-Ho Kim*
ACS Applied Materials & Interfaces 15, 29, 35342-35349 (2023)
Jubin Nathawat, Ishiaka Mansaray, Kohei Sakanashi, Naoto Wada, Michael D. Randle, Shenchu Yin, Keke He, Nargess Arabchigavkani,
Ripudaman Dixit, Bilal Barut, Miao Zhao, Harihara Ramamoorthy, Ratchanok Somphonsane, Gil-Ho Kim, Kenji Watanabe, Takashi Taniguchi, Nobuyuki Aoki, Jong E. Han, Jonathan P. Bird*
Nature Communications 4, 1507 (2023)
Dual-Channel WS2/WSe2 Heterostructure with Tunable Graphene Electrodes
Hanul Kim, Jihoon Kim, Inayat Uddin, Nhat Anh Nguyen Phan, Dongmok Whang,* and Gil-Ho Kim*
ACS Applied Electronic Materials 5, 913-919 (2023)
Quantum Hall plateau-plateau transition revisited
Ching-Chen Yeh, Siang-Chi Wang, Shun-Tsung Lo, Gil-Ho Kim, D.A. Ritchie, Gottfried Strasser, Chi-Te Liang*
Chinese Journal of Physics 82, 149–154 (2023)
MoTe2‑Based Schottky Barrier Photodiode Enabled by Contact Engineering
Inayat Uddin, Nhat Anh Nguyen Phan, Hai Yen Le Thi, Hanul Kim, Dongmok Whang, and Gil-Ho Kim*
ACS Applied Nano Materials 6, 445-452 (2023)
Enhanced contact properties of MoTe2-FET via laser-induced heavy doping
Tianshun Xie, Kazuki Fukuda, Mengnan Ke, Peter Krüger, Keiji Ueno, Gil-Ho Kim, and Nobuyuki Aoki*
Japanese Journal of Applied Physics 62, SC1010 (2023)
Improved electrical properties of encapsulated MoTe2 1T' edge contacts via laser irradiation
Yewon Kim, A. Venkatesan, Jihoon Kim, Hanul Kim, Kenji Watanabe, Takashi Taniguchi, Dongmok Whang & Gil-Ho Kim*
Materials Science in Semiconductor Processing 153, 107133 (2023)
2022
Self-forming p-n junction diode realized with WSe2 surface and edge dual contacts
Hai Yen Le Thi, Tien Dat Ngo, Nhat Anh Nguyen Phan, Won Jong Yoo, Kenji Watanabe, Takashi Taniguchi, Nobuyuki Aoki, Jonathan P. Bird, and Gil-Ho Kim*
Small 18, 2204547 (2022)
Enhanced performance of WS2 field-effect transistor through mono and bilayer h-BN tunneling contacts
Nhat Anh Nguyen Phan, Hamin Noh, Jihoon Kim, Yewon Kim, Hanul Kim, Dongmok Whang, Nobuyuki Aoki, Kenji Watanabe, Takashi Taniguchi & Gil-Ho Kim*
Small 18, 2105753 (2022)
2021
Schottky Diode with Asymmetric Metal Contacts on WS2
Jihoon Kim, A. Venkatesan, Phan Nguyen Nhat Anh, Hanul Kim, Yewon Kim, Dongmok Whang & Gil-Ho Kim*
Advanced Electronic Material 2100941 (2021)
Kohei Sakanashi, * Peter Krüger, Kenji Watanabe, Takashi Taniguchi, Gil-Ho Kim, David K. Ferry, Jonathan P. Bird & Nobuyuki Aoki *
Nano Letters 21, 7534 (2021)
Valley polarized conductance quantization in bilayer graphene narrow quantum point contact
Kohei Sakanashi *, Naoto Wada, Kentaro Murase, Kenichi Oto, Gil-Ho Kim, Kenji Watanabe, Takashi Taniguchi, Jonathan P. Bird, David K. Ferry & Nobuyuki Aoki *
Applied Physics Letters 118, 263102 (2021)
High mobility field-effect transistors based on MoS2 crystal grown by the flux method
Vilas S Patil , Jihyun Kim , Khushabu S Agrawal , Tuson Park , Junsin Yi , Nobuyuki Aoki , Kenji Watanabe , Takashi Taniguchi & Gil-Ho Kim *
Nanotechnology 32, 325603 (2021)
Improved Contact Resistance by a Single Atomic Layer Tunneling Effect in WS2/MoTe2 Heterostructures
Jihoon Kim, A. Venkatesan, Hanul Kim, Yewon Kim, Dongmok Whang & Gil-Ho Kim*
Advanced Science 8, 2100102 (2021)
High performance ambipolar MoS2 transistor enabled by indium edge contacts
Hai Yen Le Thi, Muhammad Atif Khan, A. Venkatesan, Kenji Watanabe, Takashi Taniguchi & Gil-Ho Kim*
Nanotechnology 32, 215701 (2021)
2020
Study of oxygen plasma induced modulation of photoconductivity in MoS2 field effect transistor
M.A. Khan, S. Rathi, S.J. Yun & Gil-Ho Kim*
Superlattices and Microstructures142, 106507 (2020)
Few-layer PdSe2-based field-effect transistor for photodetector applications
A. Venkatesan, S. Rathi, Y. Kim, H. Kim, D. Whang, S.J. Yun & Gil-Ho Kim*
Materials Science in Semiconductor Processing115, 105102 (2020)
Clean Interface Contact Using a ZnO Interlayer for Low-Contact-Resistance MoS2 Transistors
J. Jang, Y. Kim, S.S. Chee, H. Kim, D. Whang, Gil-Ho Kim* & S.J. Yun*
ACS Appl. Mater. Interfaces 12, 5031 (2020)
2019
C. Chuang, M. Mineharu, M Matsunaga, C-W Liu, B-YiWu, Gil-Ho Kim, K. Watanabe, T. Taniguchi, C-T Liang & N. Aoki*
Carbon 154, 238 (2019)
J. Nathawat, M. Zhao, C-P Kwan, S. Yin, N. Arabchigavkani, M. Randle, H. Ramamoorthy, G. He, R. Somphonsane, N. Matsumoto, K. Sakanashi, M. Kida, N. Aoki, Z. Jin, Y. Kim, Gil-Ho Kim, K. Watanabe, T. Taniguchi & J. P. Bird*
ACS Omega 4, 4082 (2019)
2018
High performance self-gating graphene/MoS2 diode enabled by asymmetric contacts
M. A. Khan, S. Rathi, C. Lee, Y. Kim, H. Kim, D. Whang, S. J. Yun, D-H Youn, K. Watanabe, T. Taniguchi & Gil-Ho Kim*
Nanotechnology 29, 395201 (2018)
M. A. Khan, S. Rathi, C. Lee, D. Lim, Y. Kim, S. J. Yun, D-H Youn & Gil-Ho Kim*
ACS Appl. Mater. Interfaces 10, 23961 (2018)
C. Lee, S. Rathi, M. A. Khan, D. Lim, Y. Kim, S. J. Yun, D-H Youn, K. Watanabe, T. Taniguchi & Gil-Ho Kim*
Nanotechnology 29, 335202 (2018)
Hot carriers in CVD-grown graphene device with a top h-BN layer
C. Chuang, M. Mineharu, N. Matsumoto, M. Matsunaga, CW Liu, BY Wu, Gil-Ho Kim, LH Lin, Y. Ochiai, K. Watanabe, T. Taniguchi, CT Liang & N. Aoki *
Journal of Nanomaterials 7, 5174103 (2018)
C. Chuang, C-T Liang, Gil-Ho Kim, R. E. Elmquist, Y. Yang, Y. P. Hsieh, D. K. Patel, K. Watanabe, T. Taniguchi & N. Aoki*
Carbon 8, 6223 (2018)
Observation of negative differential resistance in mesoscopic graphene oxide devices
S. Rathi, I. Lee, M. Kang, D. Lim, Y. Lee, S. Yamacli, H-I Joh, S. Kim, S-W Kim, S. J. Yun, S. Choi & Gil-Ho Kim*
Scientific Reports 8, 7144 (2018)
Gate tunable self-biased diode based on few layered MoS2 and WSe2
M. A. Khan, S. Rathi, D. Lim, S. J. Yun, D-H Youn, K. Watanabe, T. Taniguchi & Gil-Ho Kim*
Chemistry of Materials 30, 1011 (2018)
Photodetector based on multilayer SnSe2 field effect transistor
M. Kang, S. Rathi, I. Lee, L. Li, M. A. Khan, D. Lim, Y. Lee, J. Park, A. T. Pham, A. T. Duong, S. Cho, S. J. Yun & Gil-Ho Kim*
Journal of Nanoscience and Nanotechnology 18, 4243 (2018)
2017
D-H Youn, C. Yeon, J. S. Choi, N-M Park, I. Lee, Gil-Ho Kim, and S. J. Yun*
RSC Advances 7, 44945 (2017)
Hole dephasing caused by hole–hole interaction in a multilayered black phosphorus
L. Li, M. A. Khan, Y. Lee, I. Lee, S. J. Yun, D-H Youn, and Gil-Ho Kim*
Journal of Physics: Condensed Matter 4, 435302 (2017)
A. Venkatesan, S. Rathi, I. Lee, J. Park, D. Lim, M. Kang, H-I Joh, Gil-Ho Kim*, and E. S. Kannan*
Nanotechnology 8, 365501 (2017)
Junctionless diode enabled by self-bias effect of ion gel in single-layer MoS2 device
M. A. Khan, S. Rathi, J. Park, D. Lim, Y. Lee, S. J. Yun, D-H Youn, and Gil-Ho Kim*
ACS Applied Materials & Interfaces 9, 26983 (2017)
C-W Liu, C-I Liu, C-T Liang*, Gil-Ho Kim*, C. F. Huang, D. R. Hang, Y. H. Chang, and D. A. Ritchie
Semiconductor Science and Technology 7, 085011 (2017)
S. Rathi, I. Lee, J. M. Baik, and Gil-Ho Kim*
Journal of Nanoscience and Nanotechnology 17, 4247 (2017)
N. Matsumoto, M. Mineharu, M. Matsunaga, C. Chuang, Y. Ochiai, K. Oto, Gil-Ho Kim, K. Watanabe, T. Taniguchi, D. K. Ferry, C. R. D. Cunha, and N. Aoki*
Journal of Physics: Condensed Matter 29, 225301 (2017)
C. Yeon, I. Lee, Gil-Ho Kim, and S. J. Yun*
Langmuir 33, 1217 (2017)
2016
Transparent conducting films of silver hybrid films formed by near-field electrospinning
D-H Youn, Y-J Yu, J. S. Choi, N-M Park, S. J. Yun, I. Lee, and Gil-Ho Kim*
Materials Letters 185, 139 (2016)
Programmed dielectrophoretic assembly of Pd nanoparticles for conductance control in VO2 nanowires
S. Rathi, Y. Kwak, L. Jing, K. S. Yi, J. M. Baik, and Gil-Ho Kim*
Current Applied Physics 17, 351 (2016)
M. Kang, S. Rathi, I. Lee, L. Li, M.A. Khan, D. Lim, Y. Lee, J. Park, S.J. Yun, D-H Youn, C. Jun, and Gil-Ho Kim*
Nanoscale 9, 1645 (2016)
L. Li, I. Lee, D-H Youn, and Gil-Ho Kim*
Nanotechnology 28, 075201 (2016)
A. Venkatesan, S. Rathi, I. Lee, J. Park, D. Lim, Gil-Ho Kim, and E. S. Kannan*
Semiconductor Science and Technology 10, 125014 (2016)
C. R. da Cunha, M. Mineharu, M. Matsunaga, N. Matsumoto, C. Chuang, Y. Ochiai, Gil-Ho Kim, K. Watanabe, T. Taniguchi, D. K. Ferry, N. Aoki*
Scientific Reports 6, 33118 (2016)
I. Lee, S. Rathi, D. Lim, L. Li, J. Park, Y. Lee, K. S. Yi, K. P. Dhakal, J. Kim, C. Lee, G-H Lee, Y. D. Kim, J. Hone, S. J. Yun, D-H Youn, Gil-Ho Kim*
Advanced Materials 28, 9519 (2016)
L. Li, I. Lee, D. Lim, S. Rathi, M. Kang, T. Uemura, and Gil-Ho Kim*
Nanotechnology 6 335201 (2016)
High performance MoS2-based field-effect transistor enabled by hydrazine doping
D. Lim, E. S. Kannan, I. Lee, S. Rathi, L. Li, Y. Lee, M. A. Khan, M. Kang, J. Park, and Gil-Ho Kim*
Nanotechnology 6, 225201 (2016)
N. Rathi, S. Rathi, I. Lee, J. Wang, M. Kang, D. Lim, M. A. Khan, Y. Lee, and Gil-Ho Kim*
RSC Advances 6, 23961 (2016)
M. A. Khan, S. Rathi, I. Lee, L. Li, D. Lim, M. Kang, and Gil-Ho Kim*
Applied Physics Letters 108, 093104 (2016)
2015
I. Lee, S. Rathi, L. Li, D. Lim, M. A. Khan, E. S. Kannan, and Gil-Ho Kim*
Nanotechnology 6, 455203 (2015)
Gil-Ho Kim, S. Rathi, J. M. Baik, and K. S. Yi*
Current Applied Physics 15, 1107 (2015)
Raman shift and electrical properties of MoS2 bilayer on boron nitride substrate
L. Li, I. Lee, D. Lim, M. Kang, Gil-Ho Kim*, N. Aoki, Y. Ochiai, K. Watanabe, and T. Taniguchi
Nanotechnology 6, 295702 (2015)
S. Rathi, I. Lee, D. Lim, J. Wang, Y. Ochiai, N. Aoki, K. Watanabe, T. Taniguchi, G-H Lee, Y-J Yu, P. Kim, and Gil-Ho Kim*
Nano Letters 15, 5017 (2015)
J. Wanga, S. Rathi, B. Singh, I. Lee, S. Maeng, H-I Joh, and Gil-Ho Kim*
Sensors and Actuators B: Chemical 220, 755 (2015)
J. Wang, S. Rathi, B. Singh, I. Lee, H-I Joh, and Gil-Ho Kim*
ACS Applied. Materials & Interfaces 7, 13768 (2015)
Construction and characterization of Cu2+, Ni2+, Zn2+, and Co2+ modified-DNA crystals
S. R. Dugasani, M. Kim, I. Lee, J. A. Kim, B. Gnapareddy, K. W. Lee, T. Kim, N. Huh, Gil-Ho Kim*, S. C. Park*, and S. H. Park*
Nanotechnology 8, 275604 (2015)
B. Singh, J. Wang, S. Rathi, and Gil-Ho Kim*
Applied Physics Letters 106, 203106 (2015)
Electrical characterization of multilayer HfSe2 field-effect transistors on SiO2 substrate
M. Kang, S. Rathi, I. Lee, D. Lim, J. Wang, L. Li, M. A. Khan, and Gil-Ho Kim*
Applied Physics Letters 106, 143108 (2015)
2014
Non-monotonic magnetoresistivity in two-dimensional electron systems
Y-T Wang, T-P Woo*, S-T Lo, Gil-Ho Kim*, and C-T Liang*
Journal of the Korean Physical Society 10, 1503 (2014)
Post fabrication annealing effects on insulator−metal transitions in VO2 thin-film devices
S. Rathi, I. Lee, J-H Park, B-J Kim, H-T Kim, and Gil-Ho Kim*
ACS Applied. Materials & Interfaces 6, 19718 (2014)
S-U Yang, W-S Jung, I. Lee, H-W Jung, Gil-Ho Kim, and J-H Park*
Materials Research Bulletin 50, 409 (2014)
Transition from direct to Fowler–Nordheim tunneling in chemically reduced graphene oxide film
S. Pandey, C. Biswas, T. Ghosh, J. J. Bae, P. Rai, Gil-Ho Kim, K. J. Thomas, Y. H. Lee, P. Nikolaeva, and S. Arepalli*
Nanoscale 6, 3410 (2014)
Conductance control in VO2 nanowires by surface doping with gold nanoparticles
Gil-Ho Kim*, Y. Kwak, I. Lee, S. Rathi, J. M. Baik, and K. S. Yi
ACS Applied. Materials & Interfaces 6, 14812 (2014)
S. Rathi, J-H Park, I. Lee, J. M. Baik, K. S. Yi, and Gil-Ho Kim*
Journal of Physics D: Applied Physics 8, 295101 (2014)
Y-T Wang, T-P Woo*, S-T Lo, Gil-Ho Kim*, and C-T Liang*
Journal of the Korean Physical Society 10, 1572 (2014)
I. Lee, H-Y Park, J. Park, G. Yoo, M-H Lim, J. Park, S. Rathi, W-S Jung, J. Kim, S-W Kim, Y. Roh, Gil-Ho Kim*, and J-H Park*
Nanoscale 6, 3830 (2014)
Dielectrophoresis of graphene oxide nanostructures for hydrogen gas sensor at room temperature
J. Wang, B. Singh, J-H Park, S. Rathi, I. Lee, S. Maeng, H-I Joh, C-H Lee, and Gil-Ho Kim*
Sensors and Actuators B: Chemical 194, 296 (2014)
2013
S. Ishrat, K. Maaz, K-J Lee, M-H Jung, and Gil-Ho Kim*
Journal of Solid State Chemistry 210, 116 (2013)
S. Rathi, J-H Park, I. Lee, M. J. Kim, J. M. Baik, and Gil-Ho Kim*
Applied Physics Letters 103, 203114 (2013)
J. Wang, B. Singh, S. Maeng, H-I Joh, and Gil-Ho Kim*
Applied Physics Letters 103, 083112 (2013)
I. Lee, H-Y Park, J-H Park, J. Lee, W-S Jung, H-Y Yu, S-W Kim, Gil-Ho Kim*, and J-H Park*
Organic Electronics 14, 1586 (2013)
S. Ishrat, K. Maaz, K. J. Lee, M-H Jung, and Gil-Ho Kim*
Journal of Solid State Chemistry 199, 160 (2013)
2012
Single domain limit for NixCo1-xFe2O4 (0=< x=< 1) nanoparticles synthesized by coprecipitation route
K. Maaz, and Gil-Ho Kim*
Materials Chemistry and Physics 137, 3594 (2012)
Effect of particle size on the magnetic properties of NixCo1-xFe2O4 (x ~0.3) nanoparticles
K. Maaz, S. Karim, and Gil-Ho Kim*
Chemical Physics Letters 549, 67 (2012)
Y-T Wang, Gil-Ho Kim*, C. F. Huang, S-T Lo, W-J Chen, J. T. Nicholls, L-H Lin, D. A. Ritchie, Y. H. Chang, C-T Liang*, and B. P. Dolan*
Journal of Physics: Condensed Matter 8, 405801 (2012)
Electron dephasing of a GaAs/AlGaAs quantum well with self-assembled InAs dots
L. Li, J. Wang, Gil-Ho Kim*, and D. A. Ritchie
Journal of Physics: Condensed Matter 5, 385301 (2012)
I. Lee, J. Wang, Gil-Ho Kim*, J-H Park, E. S. Kannan, J-H Jang, and Y-U Kwon
Journal of Applied Physics 112, 033701 (2012)
S. Ishrat, K. Maaz, K. J. Lee, M-H Jung, and Gil-Ho Kim*
Journal of Alloys and Compounds 541, 483 (2012)
J. Wang, Y. Kwak, I. Lee, S. Maeng, and Gil-Ho Kim*
Carbon 50, 4061 (2012)
K. Jang, I. Lee, J. Xu, J. Choi, J. Jin, J. H. Park, H. J. Kim, Gil-Ho Kim*, and S. U. Son*
Crystal Growth & Design 12, 3388 (2012)
Effect of temperature on the magnetic characteristics of Ni0.5Co0.5Fe2O4 nanoparticles
K. Maaz, S. Karim, K. J. Lee, M-H Jung, and Gil-Ho Kim*
Materials Chemistry and Physics 133, 1006 (2012)
M-H Lim, I Lee, S-G Jeong, J Lee, W-S Jung, H-Y Yu, Gil-Ho Kim, Y. Roh, and J-H Park*
Organic Electronics 13, 1056 (2012)
K. Maaz, S. H. Kim, M-H Jung, and Gil-Ho Kim*
Journal of Alloys and Compounds 520, 272 (2012)
K. H. Lee, H-J Shin, J. Lee, I. Lee, Gil-Ho Kim, J-Y Choi, and S-W Kim*
Nano Letters 12, 714 (2012)
2011
Magnetic properties of one-dimensional embedded nickel nanostructures in gold nanowires
S. Ishrat, K. Maaz, Rong Chen, S. H. Kim, M. H. Jung, and Gil-Ho Kim*
Current Applied Physics 12, 65 (2011)
Y. Kwak, J. Wang, S. Meang, and Gil-Ho Kim*
Nanotechnology 22, 445501 (2011)
B. L. Huy, S. Kumar, and Gil-Ho Kim*
Journal of Physics D: Applied Physics 44, 325402 (2011)
Effect of aging on the magnetic characteristics of nickel nanowires embedded in polycarbonate
K. Maaz, S. Ishrat, S. Karim, and Gil-Ho Kim*
Journal of Applied Physics 110, 013908 (2011)
Y-K Seo, S. Kumar, and Gil-Ho Kim*
Journal of Nanoscience and Nanotechnology 11, 4852 (2011)
Hopping conduction and magnetoresistance of a GaAs/AlxGa1−xAs quantum well with embedded InAs dots
L. Li, Gil-Ho Kim*, K. J. Thomas, and D. A. Ritchie
Physical Review B 83, 153304 (2011)
C-T Liang*, L-H Lin, K. Y. Chen, S-T Lo, Y-T Wang, D-S Lou, Gil-Ho Kim, Y-H Chang, Y. Ochiai, N. Aoki, J-C Chen, Y. Lin, C-F Huang, S-D Lin, and D. A. Ritchie
Nanoscale Research Letters 6, 131 (2011)
2010
The effects of high purity MgO nano-powders on the electrical properties of AC-PDPs
J-S Choi, S-H Moon, J-H Kim, and Gil-Ho Kim*
Current Applied Physics 10, 1378 (2010)
Charge trapping in quantum dot memory devices with different dot densities
E. S. Kannan, Gil-Ho Kim*, and D. A. Ritchie
Journal of Physics D: Applied Physics 43, 225101 (2010)
Crossover from negative to positive magnetoresistance in a Si delta-doped GaAs single quantum well
S-T Lo, K. Y. Chen, Y-C Su, C. T. Liang*, Y. H. Chang, Gil-Ho Kim, J-Y Wu, and S-D Lin
Solid State Communications 150, 1104 (2010)
Y-K Seo, S. Kumar, and Gil-Ho Kim*
Physica E 42, 1163 (2010)
Probing two-dimensional metallic-like and localization effects at low magnetic fields
T-Y Huang, C-T Liang*, Gil-Ho Kim, C. F. Huang, C-P Huang, and D. A. Ritchie
Physica E 42, 1142 (2010)
E. S. Kannan, M. Karamad, Gil-Ho Kim*, I. Farrer, and D. A. Ritchie
Journal of Physics: Condensed Matter 22, 045802 (2010)
Assembly of gold nanoparticles of different diameters between nanogap electrodes
D. Cheon, S. Kumar, and Gil-Ho Kim*
Applied Physics Letters 96, 013101 (2010)
2009
I. Lee, E. S. Kannan, and G-H Kim*
Applied Physics Letters 95, 263308 (2009)
Memory characteristics of InAs quantum dots embedded in GaAs quantum well
E. S. Kannan, Gil-Ho Kim*, and D. A. Ritchie
Applied Physics Letters 95, 143506 October (2009)
An Experimental Study on the Hall Insulators
T-Y Huang, C. F. Huang, G-H Kim, C-P Huang, C-T Liang*, and D. A. Ritchie
Chinese Journal of Physics 47, 3 (2009)
S. Kumar, Y-K Seo, and G-H Kim*
Applied Physics Letters 94, 153104 (2009)
N. V. Hoang, S. Kumar, and G-H Kim*
Nanotechnology 20, 125607 (2009)
ZnO based surface acoustic wave ultraviolet photo sensor
S. Kumar, G-H Kim*, K. Sreenivas, and R. P. Tandon
J Electroceram 22:198 (2009)
Bridging the nanogap electrodes with gold nanoparticles using dielectrophoresis technique
S. Kumar, S-H Yoon, and G-H Kim*
Current Applied Physics 9, 101 (2009)
2008
Charge trapping in a double quantum well system
E. S. Kannan, G-H Kim*, I. Farrer, and D. A. Ritchie
Journal Of Physics: Condensed Matter 20, 455206 (2008)
From insulator to quantum Hall liquid at low magnetic fields
T-Y Huang, C-T Lian*, G-H Kim, C. F. Huang, C-P Huang, J-Y Lin, H-S Goan, and D. A. Ritchie
Physical Review B 78, 113305 (2008)
Dielectrophoretic Assembly of Single Gold Nanoparticle into Nanogap Electrodes
S-H Yoon, S. Kumar, G-H Kim*, Y-S Choi, T. W. Kim, and S. I. Khondaker
Journal of Nanoscience and Nanotechnology 8, 3427 (2008)
Effects of post-growth annealing on the structure and elector-optical properties of low-temperature grown GaAs
D-H Youn, S-H Lee, H-C Ryu, S-Y Jung, S-B Kang, M-H Kwack, S. Kim, S-K Choi, M-C Baek, K-Y Kang, C-S Kim, K-J Yee, Y-B Ji, E-S Lee, T-I Jeon, S-J Kim, S. Kumar, and G-H Kim
Journal of Applied Physics 103, 123528 (2008)
E. S. Kannana, G-H Kim*, I. Farrer, and D. A. Ritchie
Physica E 40, 1442 (2008)
2007
Transport hysteresis in AlGaAs/GaAs double quantum well systems with InAs quantum dots
E. S. Kannan, G-H Kim*, I. Farrer, and D. A. Ritchie
Journal Of Physics: Condensed Matter 19, 506207 (2007)
Mechanism of ultraviolet photoconductivity in zinc oxide nanoneedles
S. Kumar, G-H Kim, K. Sreenivas, and R. P. Tandon*
Journal Of Physics: Condensed Matter 19, 472202 (2007)
D-H Youn, S-J Kim, G-H Kim, and K-Y Kang*
Japanese Journal of Applied Physics 10A, 6514 (2007)
E. S. Kannan, G-H Kim*, J-Y Lin, J-H Chen, K. Y. Chen, Z-Y Zhang, C-T Liang, L-H Lin, D. H. Youn, K-Y Kang, and N. C. Chen
Journal of the Korean Physical Society 6, 1643 (2007)
E. S. Kannan, G-H Kim*, S. Kumar, I. Farrer, D. A. Ritchie, D. H. Youn, and K-Y Kang
Applied Physics Letters 90, 152110 (2007)
Formation of silicon oxide nanowires directly from Au/Si and Pd–Au/Si substrates
H-K Park, B. Yang, S-W Kim*, G-H Kim, D-H Youn, S-H Kim, and S-L Maeng
Physica E 37, 158 (2007)
2006
H. S. Kwack, Y. H. Cho*, G-H Kim, M. R. Park, D. H. Youn, S. B. Bae, K-S Lee, J. H. Lee, and J. H. Lee
Physica Status Solidi (C) 6, 2109 (2006)
Vertically Well-Aligned ZnO Nanowires on c-Al2O3 and GaN Substrates by Au Catalyst
H-K Park*, M. H. Oh, S-W Kim, G-H Kim, D-H Youn, S. Lee, S-H Kim, K-C Kim, and S-L Maeng
ETRI Journal 6, 787 (2006)
Magnetotransport Measurements on an AlGaN/GaN Two-Dimensional Electron System
J-Y Lin, J-H Chen, C-T Liang*, Y. F. Chen, G-H Kim, H. Park, D. H. Youn, C. M. Jeon, J. M. Baik, and J-L Lee
Journal of the Korean Physical Society 3, 1130 (2006)
J-H Chen, J-Y Lin, J-K Tsai, H Park, G-H Kim, D. H. Youn, H-I Cho, E-J Lee, J-H Lee, C-T Liang*, and Y. F. Chen
Journal of the Korean Physical Society 6, 1539 (2006)
2005
T. W. Kim*, K. H. Yoo, G-H Kim, S. Lee, J. K. Furdyna, and M. Dobrowolska
Solid State Communications 133, 191 (2005)
H-S Kwack, Y-H Cho*, G-H Kim, M. R. Park, D. H. Youn, S. B. Bae, K-S Lee, J-H Lee, J-H Lee, T. W. Kim, T. W. Kang, and K. L. Wang
Applied Physics Letters 87, 041909 (2005)
Experimental determination of electron and hole sublevels in modulation-doped InAs/GaAs quantum dots
Y. D. Jang, J. S. Yim, D. Lee*, G-H Kim, C-T Liang, I. Farrer, and D. A. Ritchie
Applied Physics Letters 87, 232110 (2005)
Effects of Zeeman spin splitting on the modular symmetry in the quantum Hall effect
D. R. Hang*, R. B. Dunford, G-H Kim, H. D. Yeh, C. F. Huang, D. A. Ritchie, I. Farrer, Y. W. Zhang, C-T Liang, and Y. H. Chang
Microelectronics Journal 36, 469 (2005)
2004
H. S. Wang, Y. H. Chiu, G-H Kim, C-T Liang*, M. Y. Simmons, and D. A. Ritchie
Physica E 22, 135 (2004)
Kinetic Analysis of Hole Migration Through DNA
Y. Lee, and G-H Kim*
Journal of the Korean Physical Society 4, 993 (2004)
Conventional and microwave-modulated Shubnikov–de Haas oscillations in GaN electron systems
J. R. Juang, D. R. Hang, T-Y Huang, W. K. Hung, Y. F. Chen, G-H Kim, M-G Lin, T-M Chen, C-T Liang*, Y. Lee, J-H Lee, and J-H Lee
Physica E 21, 631 (2004)
On the low-field insulator-quantum Hall conductor transitions
T-YuHuang, J. R. Juang, C. F. Huang, G-H Kim, C-P Huang, C-T Liang*, Y. H. Chang, Y. F. Chen, Y. Lee, and D. A. Ritchie
Physica E 22, 240 (2004)
Microwave-modulated Shubnikov–de Haas oscillations in a two-dimensional GaN electron gas
D. R. Hang, J. R. Juanga, T-Y Huang, C-T Liang*, W. K. Hung, Y. F. Chen, G-H Kim, Y. Lee, J-H Lee, J-H Lee, and C. F. Huang
Physica E 22, 578 (2004)
Transport and quantum lifetime dependence on electron density in gated GaAs/AlGaAs heterostructures
T-M Chen*, C-T Liang, M. Y. Simmons, G-H Kim, and D. A. Ritchie
Physica E 22, 312 (2004)
G-H Kim*, C-T Liang, C. F. Huang, J. T. Nicholls, D. A. Ritchie, P. S. Kim, C. H. Oh, J. R. Juang, and Y. H. Chang
Physical Review B 69, 073311 (2004)
W-H Seo, C. O’Brien, J. F. Donegan*, Y. Lee, and G-H Kim
Optical and Quantum Electronics 36, 1147–1153 (2004)
2003
Formation process and lattice parameter of InAs/GaAs quantum dots
M. D. Kim, H. S. Lee, J. Y. Lee, T. W. Kim*, K. H. Yoo, and G-H Kim
Journal of Materials Science Letters 22, 1767 (2003)
Spin-dependent transport in a dilute two-dimensional GaAs electron gas in an in-plane magnetic field
C-T Liang*, C. G. Smith, M. Y. Simmons, G-H Kim, D. A. Ritchie, and M. Pepper
Physica E 18, 141 (2003)
G-H Kim*, C-T Liang, C. F. Huang, M-H Lee, J. T. Nicholls, and D. A. Ritchie
Physica E 17, 292 (2003)
Transport Properties in Samples Containing InAs Self-Assembled Dots and Dashes
G-H Kim*, J. T. Nicholls, D. A. Ritchie, S. I. Khondaker, C-T Liang, and T. W. Kim
Journal of the Korean Physical Society 42, S454 (2003)
Transport in a gated Al0.18Ga0.82N/GaN electron system
J. R. Juang, T-Y Huang, T-M Chen, M-G Lin, G-H Kim, Y. Lee, C-T Liang*, D. R. Hang, Y. F. Chen, and J-I Chyi
Journal of Applied Physics 5, 3181 (2003)
D. R. Hang, C-T Liang, J. R. Juang, T-Yu Huang, W. K. Hung, Y. F. Chen*, G-H Kim, J-H Lee, and J-H Lee
Journal of Applied Physics 4, 2055 (2003)
2002
Self-Consistent Subband Calculations of AlGaN/GaN Single Heterojunctions
K-S Lee*, D-H Yoon, S-B Bae, M-R Park, and G-H Kim
ETRI Journal 4, 270 (2002)
G-H Kim*, J. T. Nicholls, C-T Liang, D. A. Ritchie, and S. I. Khondaker
Physica E 12, 658 (2002)
T-Y Huang, Y-M Cheng, C-T Liang*, G-H Kim, and J. Y. Leem
Physica E 12, 424 (2002)
Spin-dependent transport in a two-dimensional GaAs electron gas in a parallel magnetic field
Y-M Cheng, T-Y Huang, C. H. Pao, C-C Lee, C-T Liang*, M. Y. Simmons, C. G. Smith, D. A. Ritchie, M. Pepper, G-H Kim, and J. Y. Leem
Physica E 12, 41 (2002)
2001
Coulomb charging effects in an open quantum dot device
O. A. Tkachenko, V. A. Tkachenko, D. G. Baksheyev, C-T Liang*, M. Y. Simmons, C. G. Smith, D. A. Ritchie, G-H Kim, and M. Pepper
Journal of Physics: Condensed Matter 13, 9515 (2001)
Quantum magneto-transport in two-dimensional GaAs electron gases and SiGe hole gases
C-T Liang*, Y-M Cheng, T-Y Huang, C. F. Huang, M. Y. Simmons, D. A. Ritchie, G-H Kim, J. Y. Leem, Y. H. Chang, and Y. F. Chen
Journal of Physics and Chemistry of Solids 62, 1789 (2001)
Coulomb Charging Effects in an Open Quantum Dot Device at Zero Magnetic Field
C-T Liang*, M. Y. Simmons, C. G. Smith, G-H Kim, D. A. Ritchie, and M. Pepper
The Japan Society of Applied Physics 40, 1936 (2001)
Transport in a Modulated One-Dimensional Ballistic Channel
C-T Liang*, M. Pepper, M. Y. Simmons, C. G. Smith, G-H Kim, and D. A. Ritchie
Chinese Journal of Physics 6, 533 (2001)
Spin-Dependent Transport in a Two-Dimensional GaAs Electron System
C-T Liang*, T-Y Huang, Y-M Cheng, C. H. Pao, C-C Lee, G-H Kim, and J. Y. Leem
Chinese Journal of Physics 4, 369 (2001)
Method of determining potential barrier heights at submonolayer AlAs/GaAs heterointerfaces
G-H Kim*, M. Y. Simmons, C-T Liang, D. A. Ritchie, A. C. Churchill, H-S Sim, K. J. Chang, G. Ihm, and N. Kim
Physical Review B 64, 165313 (2001)
G-H Kim*, H-S Sim, M. Y. Simmons, C-T Liang, and D. A. Ritchie
Journal of the Korean Physical Society 39, S11 (2001)
G-H Kim*, D. A. Ritchie, C-T Liang, G. D. Lian, J. Yuan, and L. M. Brown
Journal of the Korean Physical Society 39 549 (2001)
G-H Kim*, D. A. Ritchie, C-T Liang, G. D. Lian, J. Yuan, M. Pepper, and L. M. Brown
Applied Physics Letters 24, 3896 (2001)
2000
Evidence for charging effects in an open dot at zero magnetic field
C-T Liang*, M. Y. Simmons, C. G. Smith, G-H Kim, D. A. Ritchie, and M. Pepper
Physica E 6, 418 (2000)
Multilayered gated lateral quantum dot devices
C-T Liang*, M. Y. Simmons, C. G. Smith, G-H Kim, D. A. Ritchie, and M. Pepper
Applied Physics Letters 9, 1134 (2000)
G-H Kim*, J. T. Nicholls, S. I. Khondaker, I. Farrer, and D. A. Ritchie
Physical Review B 16, 10910 (2000)
Spin-dependent transport in a clean one-dimensional channel
C-T Liang*, M. Y. Simmons, C. G. Smith, G-H Kim, D. A. Ritchie, and M. Pepper
Physical Review B 15, 10687 (1999)
1998
Experimental Evidence for Coulomb Charging Effects in an Open Quantum Dot at Zero Magnetic Field
C-T Liang*, M. Y. Simmons, C. G. Smith, G-H Kim, D. A. Ritchie, and M. Pepper
Physical Review Letters 16, 3507 (1998)
Modification of InAs quantum dot structure by the growth of the capping layer
G. D. Lian*, J. Yuan, L. M. Brown, G-H Kim, and D. A. Ritchie
Applied Physics Letters 1, 49 (1998)
Transport properties of two-dimensional electron gases containing InAs self-assembled dots
G-H Kim*, D. A. Ritchie, M. Pepper, G.D. Lian, J. Yuan, and L. M. Brown
Applied Physics Letters 17, 2468 (1998)
1995
The growth of high mobility heterostructures on (311)B GaAs
M. Y. Simmons*, A. C. Churchill, G-H Kim, A. R. Hamilton, A. Kurobe, D. R. Mace, D. A. Ritchie, and M. Pepper
Microelectronics Journal 26, 879 (1995)
1994
Electron focusing in two-dimensional electron gases grown on (311)B GaAs substrates
A. C. Churchill*, G-H Kim, M. Y. Simmons, D. A. Ritchie, and G. A. C. Jones
Physical Review B 23, 17636 (1994)
Anisotropic magnetotransport in two-dimensional electron gases on (311)B GaAs substrates
A. C. Churchill*, G-H Kim, A. Kurobe, M. Y. Simmons, D. A. Ritchie, M. Pepper, and G. A. C. Jones
Journal of Physics: Condensed Matter 6, 6131 (1994).