2020 / 2019 / 2018 / 2017 / 2016 / 2015 / 2014 / 2013 / 2012 / 2011 / 2010 / 2009-2003 / 2002-1994

2020

Study of oxygen plasma induced modulation of photoconductivity in MoS2 field effect transistor

M. A. Khan, S. Rathi, S. J. Yun, and G-H Kim*

Superlattices and Microstructures 142, 106507 (2020)

Few-layer PdSe2-based field-effect transistor for photodetector applications

A. Venkatesan, S. Rathi, Y. Kim, H. Kim, D. Whang, S. J. Yun, and G-H Kim*

Materials Science in Semiconductor Processing 115, 105102 (2020)

Clean Interface Contact Using a ZnO Interlayer for Low-Contact-Resistance MoS2 Transistors

J. Jang, Y. Kim, S-S Chee, H. Kim, D. Whang, G-H Kim*, and S. J. Yun*

ACS Appl. Mater. Interfaces 12, 5031 (2020)

2019 

Conductance interference effects in an electron-beam-resist-free chemical vapor deposition graphene device sandwiched between two h-BN sheets

C. Chuang, M. Mineharu, M Matsunaga, C-W Liu, B-YiWu, G-H Kim, K. Watanabe, T. Taniguchi, C-T Liang, and N. Aoki*

Carbon 154, 238 (2019)

Transient response of h-BN-encapsulated graphene transistors: signatures of self-heating and hot-carrier trapping

J. Nathawat, M. Zhao, C-P Kwan, S. Yin, N. Arabchigavkani, M. Randle, H. Ramamoorthy, G. He, R. Somphonsane, N. Matsumoto, K. Sakanashi, M. Kida, N. Aoki, Z. Jin, Y. Kim, G-H Kim, K. Watanabe, T. Taniguchi, and J. P. Bird*

ACS Omega 4, 4082 (2019)

2018 

High performance self-gating graphene/MoS2 diode enabled by asymmetric contacts

M. A. Khan, S. Rathi, C. Lee, Y. Kim, H. Kim, D. Whang, S. J. Yun, D-H Youn, K. Watanabe, T. Taniguchi, and G-H Kim*

Nanotechnology 29, 395201 (2018) 

Tunable electron and hole injection enabled by atomically thin tunneling layer for improved contact resistance and dual channel transport in MoS2/WSe2 van der Waals heterostructure

M. A. Khan, S. Rathi, C. Lee, D. Lim, Y. Kim, S. J. Yun, D-H Youn, and G-H Kim*

ACS Appl. Mater. Interfaces 10, 23961 (2018)

Comparison of trapped charges and hysteresis behavior in hBN encapsulated single MoS2 flake based field effect transistors on SiO2 and hBN substrates

C. Lee, S. Rathi, M. A. Khan, D. Lim, Y. Kim, S. J. Yun, D-H Youn, K. Watanabe, T. Taniguchi, and G-H Kim*

Nanotechnology 29, 335202 (2018)

 

Hot carriers in CVD-grown graphene device with a top h-BN layer

C. Chuang, M. Mineharu, N. Matsumoto, M. Matsunaga, C-W Liu, B-Y Wu, G-H Kim, L-H Lin, Y. Ochiai, K. Watanabe, T. Taniguchi, C-T Liang, and N. Aoki*

Journal of Nanomaterials 7, 5174103 (2018)

Large, non-saturating magnetoresistance in single layer chemical vapor deposition graphene with an h-BN capping layer

C. Chuang, C-T Liang, G-H Kim, R. E. Elmquist, Y. Yang, Y. P. Hsieh, D. K. Patel, K. Watanabe, T. Taniguchi, and N. Aoki*

Carbon 8, 6223 (2018)

Observation of negative differential resistance in mesoscopic graphene oxide devices

S. Rathi, I. Lee, M. Kang, D. Lim, Y. Lee, S. Yamacli, H-I Joh, S. Kim, S-W Kim, S. J. Yun, S. Choi, and G-H Kim*

Scientific Reports 8, 7144 (2018)

Gate tunable self-biased diode based on few layered MoS2 and WSe2

M. A. Khan, S. Rathi, D. Lim, S. J. Yun, D-H Youn, K. Watanabe, T. Taniguchi, and G-H Kim*

Chemistry of Materials 30, 1011 (2018)

Photodetector based on multilayer SnSe2 field effect transistor

M. Kang, S. Rathi, I. Lee, L. Li, M. A. Khan, D. Lim, Y. Lee, J. Park, A. T. Pham, A. T. Duong, S. Cho, S. J. Yun, and G-H Kim*

Journal of Nanoscience and Nanotechnology 18, 4243 (2018)

 
 
 
 

2017 

Arbitrary alignment-angle control method of electrospun fibers: potential for a stretchable electrode material

D-H Youn, C. Yeon, J. S. Choi, N-M Park, I. Lee, G-H Kim, and S. J. Yun*

RSC Advances 7, 44945 (2017) 

Hole dephasing caused by hole–hole interaction in a multilayered black phosphorus

L. Li, M. A. Khan, Y. Lee, I. Lee, S. J. Yun, D-H Youn, and G-H Kim*

Journal of Physics: Condensed Matter 4, 435302 (2017) 

Molybdenum disulfide nanoparticles decorated reduced graphene oxide: highly sensitive and selective hydrogen sensor

A. Venkatesan, S. Rathi, I. Lee, J. Park, D. Lim, M. Kang, H-I Joh, G-H Kim*, and E. S. Kannan*

Nanotechnology 8, 365501 (2017) 

Junctionless diode enabled by self-bias effect of ion gel in single-layer MoS2 device

M. A. Khan, S. Rathi, J. Park, D. Lim, Y. Lee, S. J. Yun, D-H Youn, and G-H Kim*

ACS Applied Materials & Interfaces 9, 26983 (2017)

Landau-level mixing, floating-up extended states, and scaling behavior in a GaAs-based two-dimensional electron system containing self-assembled InAs dots

C-W Liu, C-I Liu, C-T Liang*, G-H Kim*, C. F. Huang, D. R. Hang, Y. H. Chang, and D. A. Ritchie

Semiconductor Science and Technology 7, 085011 (2017) 

Electric-field induced abrupt and multi-step insulator-metal transitions in vanadium dioxide nanobeams

S. Rathi, I. Lee, J. M. Baik, and G-H Kim*

Journal of Nanoscience and Nanotechnology  17, 4247 (2017) 

Shubnikov–de Haas measurements on a high mobility monolayer graphene flake sandwiched between boron nitride sheets

N. Matsumoto, M. Mineharu, M. Matsunaga, C. Chuang, Y. Ochiai, K. Oto, G-H Kim, K. Watanabe, T. Taniguchi, D. K. Ferry, C. R. D. Cunha, and N. Aoki*

Journal of Physics: Condensed Matter 29, 225301 (2017)

Unimer-assisted exfoliation for highly concentrated aqueous dispersion solutions of single- and few-layered van der Waals materials

C. Yeon, I. Lee, G-H Kim, and S. J. Yun*

Langmuir 33, 1217 (2017)

2016

 

Transparent conducting films of silver hybrid films formed by near-field electrospinning

D-H Youn, Y-J Yu, J. S. Choi, N-M Park, S. J. Yun, I. Lee, and G-H Kim*

Materials Letters 185, 139 (2016) 

Programmed dielectrophoretic assembly of Pd nanoparticles for conductance control in VO2 nanowires

S. Rathi, Y. Kwak, L. Jing, K. S. Yi, J. M. Baik, and G-H Kim*

Current Applied Physics 17, 351 (2016) 

Tunable electrical properties of multilayer HfSe2 field effect transistors by oxygen plasma treatment

M. Kang, S. Rathi, I. Lee, L. Li, M.A. Khan, D. Lim, Y. Lee, J. Park, S.J. Yun, D-H Youn, C. Jun, and G-H Kim*

Nanoscale  9, 1645 (2016)

Hopping conduction and random telegraph signal in an exfoliated multilayer MoS2 field-effect transistor

L. Li, I. Lee, D-H Youn, and G-H Kim*

Nanotechnology 28, 075201 (2016)

Low temperature hydrogen sensing using reduced graphene oxide and tin oxide nanoflowers based hybrid structure

A. Venkatesan, S. Rathi, I. Lee, J. Park, D. Lim, G-H Kim, and E. S. Kannan*

Semiconductor Science and Technology 10, 125014 (2016) 

Conductance fluctuations in high mobility monolayer graphene: Nonergodicity, lack of determinism and chaotic behavior

C. R. da Cunha, M. Mineharu, M. Matsunaga, N. Matsumoto, C. Chuang, Y. Ochiai, G-H. Kim, K. Watanabe, T. Taniguchi, D. K. Ferry,  N. Aoki*

Scientific Reports 6, 33118 (2016)

Gate-tunable hole and electron carrier transport in atomically thin dual-channel WSe2/MoS2 heterostructure for ambipolar field-effect transistors

I. Lee, S. Rathi, D. Lim, L. Li, J. Park, Y. Lee, K. S. Yi, K. P. Dhakal, J. Kim, C. Lee, G-H Lee, Y. D. Kim, J. Hone, S. J. Yun, D-H Youn, G-H Kim*

Advanced Materials 28, 9519 (2016)

Spin diffusion and non-local spin-valve effect in an exfoliated multilayer graphene with a Co electrode

L. Li, I. Lee, D. Lim, S. Rathi, M. Kang, T. Uemura, and G-H Kim*

Nanotechnology 6 335201 (2016)

High performance MoS2-based field-effect transistor enabled by hydrazine doping

D. Lim, E. S. Kannan, I. Lee, S. Rathi, L. Li, Y. Lee, M. A. Khan, M. Kang, J. Park, and G-H Kim*

Nanotechnology 6, 225201 (2016)

Reduction of persistent photoconductivity in a few-layer MoS2 field-effect transistor by graphene oxide functionalization

N. Rathi, S. Rathi, I. Lee, J. Wang, M. Kang, D. Lim, M. A. Khan, Y. Lee, and G-H Kim*

RSC Advances 6, 23961 (2016)

P-doping and efficient carrier injection induced by graphene oxide for high performing WSe2 rectification devices

M. A. Khan, S. Rathi, I. Lee, L. Li, D. Lim, M. Kang, and G-H Kim*

Applied Physics Letters 108, 093104 (2016)

2015 

Non-degenerate n-type doping by hydrazine treatment in metal work function engineered WSe2 field-effect transistor

I. Lee, S. Rathi, L. Li, D. Lim, M. A. Khan, E. S. Kannan, and G-H Kim*

Nanotechnology 6, 455203 (2015)

Quantum size effect of surface-channeled charge carrier transport in Au nanoparticles-VO2 nanowire assembly

G-H Kim, S. Rathi, J. M. Baik, and K. S. Yi*

Current Applied Physics 15, 1107 (2015)

Raman shift and electrical properties of MoS2 bilayer on boron nitride substrate

L. Li, I. Lee, D. Lim, M. Kang, G-H Kim*, N. Aoki, Y. Ochiai, K. Watanabe, and T. Taniguchi

Nanotechnology 6, 295702 (2015) 

Tunable electrical and optical characteristics in monolayer graphene and few-layer MoS2 heterostructure devices

S. Rathi, I. Lee, D. Lim, J. Wang, Y. Ochiai, N. Aoki, K. Watanabe, T. Taniguchi, G-H Lee, Y-J Yu, P. Kim, and G-H Kim*

Nano Letters 15, 5017 (2015)

Dielectrophoretic assembly of Pt nanoparticle-reduced graphene oxide nanohybrid for highly-sensitive multiple gas sensor

J. Wanga, S. Rathi, B. Singh, I. Lee, S. Maeng, H-I Joh, and G-H Kim*

Sensors and Actuators B: Chemical 220, 755 (2015)

Alternating Current Dielectrophoresis Optimization of Pt-Decorated Graphene Oxide Nanostructures for Proficient Hydrogen Gas Sensor

J. Wang, S. Rathi, B. Singh, I. Lee, H-I Joh, and G-H Kim*

ACS Applied. Materials & Interfaces 7, 13768 (2015)

Construction and characterization of Cu2+, Ni2+, Zn2+, and Co2+ modified-DNA crystals

S. R. Dugasani, M. Kim, I. Lee, J. A. Kim, B. Gnapareddy, K. W. Lee, T. Kim, N. Huh, G-H Kim*, S. C. Park*, and S. H. Park*

Nanotechnology 8, 275604 (2015)

Alignment of graphene oxide nanostructures between microgap electrodes via dielectrophoresis for hydrogen gas sensing applications

B. Singh, J. Wang, S. Rathi, and G-H Kim*

Applied Physics Letters 106, 203106 (2015)

Electrical characterization of multilayer HfSe2 field-effect transistors on SiO2 substrate

M. Kang, S. Rathi, I. Lee, D. Lim, J. Wang, L. Li, M. A. Khan, and G-H Kim*

Applied Physics Letters 106, 143108 (2015)

2014

Non-monotonic magnetoresistivity in two-dimensional electron systems

Y-T Wang, T-P Woo*, S-T Lo, G-H Kim*, and C-T Liang*

Journal of the Korean Physical Society 10, 1503 (2014)

Post fabrication annealing effects on insulator−metal transitions in VO2 thin-film devices

S. Rathi, I. Lee, J-H Park, B-J Kim, H-T Kim, and G-H Kim*

ACS Applied. Materials & Interfaces  6, 19718 (2014)

Ohmic contact formation process on low n-type gallium arsenide (GaAs) using indium gallium zinc oxide (IGZO)

S-U Yang, W-S Jung, I. Lee, H-W Jung, G-H Kim, and J-H Park*

Materials Research Bulletin 50, 409 (2014)

Transition from direct to Fowler–Nordheim tunneling in chemically reduced graphene oxide film

S. Pandey, C. Biswas, T. Ghosh, J. J. Bae, P. Rai, G-H Kim, K. J. Thomas, Y. H. Lee, P. Nikolaeva, and S. Arepalli*

Nanoscale 6, 3410 (2014)

Conductance control in VO2 nanowires by surface doping with gold nanoparticles

G-H Kim*, Y. Kwak, I. Lee, S. Rathi, J. M. Baik, and K. S. Yi

ACS Applied. Materials & Interfaces  6, 14812  (2014)

 

Unravelling the switching mechanisms in electric field induced insulator-metal transitions in VO2 nanobeams

S. Rathi, J-H Park, I. Lee, J. M. Baik, K. S. Yi, and G-H Kim*

Journal of Physics D: Applied Physics 8, 295101 (2014)

Non-monotonic magnetoresistance in an AlGaN/GaN high-electron-mobility transistor structure in the ballistic region

Y-T Wang, T-P Woo*, S-T Lo, G-H Kim*, and C-T Liang*

Journal of the Korean Physical Society 10, 1572 (2014)

Poly-4-vinylphenol and poly(melamine-coformaldehyde)-based graphene passivation method for flexible, wearable and transparent electronics

I. Lee,  H-Y Park, J. Park, G. Yoo, M-H Lim, J. Park, S. Rathi, W-S Jung, J. Kim, S-W Kim, Y. Roh, G-H Kim*, and J-H Park*

Nanoscale  6, 3830 (2014)

Dielectrophoresis of graphene oxide nanostructures for hydrogen gas sensor at room temperature

J. Wang, B. Singh, J-H Park, S. Rathi, I. Lee, S. Maeng, H-I Joh, C-H Lee, and G-H Kim*

Sensors and Actuators B: Chemical 194, 296 (2014)

2013 

Fabrication and temperature-dependent magnetic properties of one-dimensional multilayer Au–Ni–Au–Ni–Au nanowires

S. Ishrat, K. Maaz, K-J Lee, M-H Jung, and G-H Kim*

Journal of Solid State Chemistry 210, 116 (2013)

Correlation between thermal annealing temperature and Joule-heating based insulator-metal transition in VO2 nanobeams

S. Rathi, J-H Park, I. Lee, M. J. Kim, J. M. Baik, and G-H Kim*

Applied Physics Letters 103, 203114 (2013)

Assembly of thermally reduced graphene oxide nanostructures by alternating current dielectrophoresis as hydrogen-gas sensors

J. Wang, B. Singh, S. Maeng, H-I Joh, and G-H Kim*

Applied Physics Letters 103, 083112 (2013)

Hydrazine-based n-type doping process to modulate Dirac point of graphene and its application to complementary inverter

I. Lee, H-Y Park, J-H Park, J. Lee, W-S Jung, H-Y Yu, S-W Kim, G-H Kim*, and J-H Park*

Organic Electronics 14, 1586 (2013)

Nickel segment-length dependent magnetic properties of Au–Ni–Au nanowires at low temperature fabricated by electrochemical deposition

S. Ishrat, K. Maaz, K. J. Lee, M-H Jung, and G-H Kim*

Journal of Solid State Chemistry 199, 160 (2013)

2012

Single domain limit for NixCo1-xFe2O4 (0=< x=< 1) nanoparticles synthesized by coprecipitation route

K. Maaz, and G-H Kim*

Materials Chemistry and Physics 137, 3594 (2012)

Effect of particle size on the magnetic properties of NixCo1-xFe2O4 (x ~0.3) nanoparticles

K. Maaz, S. Karim, and G-H Kim*

Chemical Physics Letters 549, 67 (2012)

Probing temperature-driven flow lines in a gated two-dimensional electron gas with tunable spin-splitting

Y-T Wang, G-H Kim*, C. F. Huang, S-T Lo, W-J Chen, J. T. Nicholls, L-H Lin, D. A. Ritchie, Y. H. Chang, C-T Liang*, and B. P. Dolan*

Journal of Physics: Condensed Matter 8, 405801 (2012)

Electron dephasing of a GaAs/AlGaAs quantum well with self-assembled InAs dots

L. Li, J. Wang, G-H Kim*, and D. A. Ritchie

Journal of Physics: Condensed Matter 5, 385301 (2012)

 

Reduced graphene oxide produced by rapid-heating reduction and its use in carbon-based field-effect transistors

I. Lee, J. Wang, G-H Kim*, J-H Park, E. S. Kannan, J-H Jang, and Y-U Kwon

Journal of Applied Physics 112, 033701 (2012)

Fabrication and temperature-dependent magnetic properties of one-dimensional embedded nickel segment in gold nanowire

S. Ishrat, K. Maaz, K. J. Lee, M-H Jung, and G-H Kim*

Journal of Alloys and Compounds 541, 483 (2012)

Highly responsive hydrogen gas sensing by partially reduced graphite oxide thin films at room temperature

J. Wang, Y. Kwak, I. Lee, S. Maeng, and G-H Kim*

Carbon 50, 4061 (2012)

Colloidal synthesis of SnSe nanocolumns through Tin precursor chemistry and their optoelectrical properties

K. Jang, I. Lee, J. Xu, J. Choi, J. Jin, J. H. Park, H. J. Kim, G-H Kim*, and S. U. Son*

Crystal Growth & Design 12, 3388 (2012)

Effect of temperature on the magnetic characteristics of Ni0.5Co0.5Fe2O4 nanoparticles

K. Maaz, S. Karim, K. J. Lee, M-H Jung, and G-H Kim*

Materials Chemistry and Physics 133, 1006 (2012)

Leakage current reduction in pentacene-based thin film transistor using asymmetric source/drain electrodes

M-H Lim, I Lee, S-G Jeong, J Lee, W-S Jung, H-Y Yu, G-H Kim, Y. Roh, and J-H Park*

Organic Electronics 13, 1056 (2012)

Effect of temperature on the exchange bias in naturally oxidized NixCo1−x (x = 0.2) nanowires fabricated by electrochemical deposition technique

K. Maaz, S. H. Kim, M-H Jung, and G-H Kim*

Journal of Alloys and Compounds 520, 272 (2012)

Large-Scale Synthesis of High-Quality Hexagonal Boron Nitride Nanosheets for Large-Area Graphene Electronics

K. H. Lee, H-J Shin, J. Lee, I. Lee, G-H Kim, J-Y Choi, and S-W Kim*

Nano Letters 12, 714 (2012)

2011 

Magnetic properties of one-dimensional embedded nickel nanostructures in gold nanowires

S. Ishrat, K. Maaz, Rong Chen, S. H. Kim, M. H. Jung, and G-H Kim*

Current Applied Physics 12, 65 (2011)

Hydrogen sensing properties of dielectrophoretically assembled SnO2 nanoparticles on CMOS-compatible micro-hotplates

Y. Kwak, J. Wang, S. Meang, and G-H Kim*

Nanotechnology 22, 445501 (2011) 

Manipulation of palladium nanoparticles in a 20 nm gap between electrodes for hydrogen sensor application

B. L. Huy, S. Kumar, and G-H Kim*

Journal of Physics D: Applied Physics 44, 325402 (2011)

Effect of aging on the magnetic characteristics of nickel nanowires embedded in polycarbonate

K. Maaz, S. Ishrat, S. Karim, and G-H Kim*

Journal of Applied Physics 110, 013908 (2011) 

Analysis of assembling ZnO nanoparticles into nanogap electrodes for nanoscale electronic device applications

Y-K Seo, S. Kumar, and G-H Kim*

Journal of Nanoscience and Nanotechnology 11, 4852 (2011)

Hopping conduction and magnetoresistance of a GaAs/AlxGa1−xAs quantum well with embedded InAs dots

L. Li, G-H Kim*, K. J. Thomas, and D. A. Ritchie

Physical Review B 83, 153304 (2011)

On the direct insulator-quantum Hall transition in two-dimensional electron systems in the vicinity of nanoscaled scatterers

C-T Liang*, L-H Lin, K. Y. Chen, S-T Lo, Y-T Wang, D-S Lou, G-H Kim, Y-H Chang, Y. Ochiai, N. Aoki, J-C Chen, Y. Lin, C-F Huang, S-D Lin, and D. A. Ritchie

Nanoscale Research Letters 6, 131 (2011)

2010 

The effects of high purity MgO nano-powders on the electrical properties of AC-PDPs

J-S Choi, S-H Moon, J-H Kim, and G-H Kim*

Current Applied Physics 10, 1378 (2010)

Charge trapping in quantum dot memory devices with different dot densities

E. S. Kannan, G-H Kim*, and D. A. Ritchie

Journal of Physics D: Applied Physics 43, 225101 (2010)

Crossover from negative to positive magnetoresistance in a Si delta-doped GaAs single quantum well

S-T Lo, K. Y. Chen, Y-C Su, C. T. Liang*, Y. H. Chang, G-H Kim, J-Y Wu, and S-D Lin

Solid State Communications 150, 1104 (2010)

Photoconductivity characteristics of ZnO nanoparticles assembled in nanogap electrodes for portable photodetector applications

Y-K Seo, S. Kumar, and G-H Kim*

Physica E 42, 1163 (2010)

Probing two-dimensional metallic-like and localization effects at low magnetic fields

T-Y Huang, C-T Liang*, G-H Kim, C. F. Huang, C-P Huang, and D. A. Ritchie

Physica E 42, 1142 (2010)

Crossover from negative to positive magnetoresistance in the double quantum well system with different starting disorder

E. S. Kannan, M. Karamad, Gil-Ho Kim*, I. Farrer, and D. A. Ritchie

Journal of Physics: Condensed Matter 22, 045802 (2010)

Assembly of gold nanoparticles of different diameters between nanogap electrodes

D. Cheon, S. Kumar, and G-H Kim*

Applied Physics Letters 96, 013101 (2010)

2009 

Capacitance-voltage and current-voltage characteristics of graphite oxide thin films patterned by ultraviolet photolithography

I. Lee, E. S. Kannan, and G-H Kim*

Applied Physics Letters 95, 263308 (2009)

Memory characteristics of InAs quantum dots embedded in GaAs quantum well

E. S. Kannan, Gil-Ho Kim*, and D. A. Ritchie

Applied Physics Letters 95, 143506 October (2009)

An Experimental Study on the Hall Insulators

T-Y Huang, C. F. Huang, G-H Kim, C-P Huang, C-T Liang*, and D. A. Ritchie

Chinese Journal of Physics 47, 3 (2009)

Manipulation and trapping of semiconducting ZnO nanoparticles into nanogap electrodes by dielectrophoresis technique

S. Kumar, Y-K Seo, and G-H Kim*

Applied Physics Letters 94, 153104 (2009)

Growth of segmented gold nanorods with nanogaps by the electrochemical wet etching technique for single-electron transistor applications

N. V. Hoang, S. Kumar, and G-H Kim*

Nanotechnology 20, 125607 (2009)

ZnO based surface acoustic wave ultraviolet photo sensor

S. Kumar, G-H Kim*, K. Sreenivas, and R. P. Tandon

J Electroceram 22:198 (2009)

Bridging the nanogap electrodes with gold nanoparticles using dielectrophoresis technique

S. Kumar, S-H Yoon, and G-H Kim*

Current Applied Physics 9, 101 (2009)

2008 

 

Charge trapping in a double quantum well system

E. S. Kannan, G-H Kim*, I. Farrer, and D. A. Ritchie

Journal Of Physics: Condensed Matter 20, 455206 (2008)

From insulator to quantum Hall liquid at low magnetic fields

T-Y Huang, C-T Lian*, G-H Kim, C. F. Huang, C-P Huang, J-Y Lin, H-S Goan, and D. A. Ritchie

Physical Review B 78, 113305 (2008)

Dielectrophoretic Assembly of Single Gold Nanoparticle into Nanogap Electrodes

S-H Yoon, S. Kumar, G-H Kim*, Y-S Choi, T. W. Kim, and S. I. Khondaker

Journal of Nanoscience and Nanotechnology 8, 3427 (2008)

Effects of post-growth annealing on the structure and elector-optical properties of low-temperature grown GaAs

D-H Youn, S-H Lee, H-C Ryu, S-Y Jung, S-B Kang, M-H Kwack, S. Kim, S-K Choi, M-C Baek, K-Y Kang, C-S Kim, K-J Yee, Y-B Ji, E-S Lee, T-I Jeon, S-J Kim, S. Kumar, and G-H Kim

Journal of Applied Physics 103, 123528 (2008)

Self-assembled InAs quantum dots to investigate the tunneling between edge states in an AlGaAs/GaAs double quantum well system

E. S. Kannana, G-H Kim*, I. Farrer, and D. A. Ritchie

Physica E  40, 1442 (2008)

 

2007 

Transport hysteresis in AlGaAs/GaAs double quantum well systems with InAs quantum dots

E. S. Kannan, G-H Kim*, I. Farrer, and D. A. Ritchie

Journal Of Physics: Condensed Matter 19, 506207 (2007)

Mechanism of ultraviolet photoconductivity in zinc oxide nanoneedles

S. Kumar, G-H Kim, K. Sreenivas, and R. P. Tandon*

Journal Of Physics: Condensed Matter 19, 472202  (2007)

Structural Change and Its Electrooptical Effects on Terahertz Radiation with Post-Growth Annealing of Low-Temperature-Grown GaAs

D-H Youn, S-J Kim, G-H Kim, and K-Y Kang*

Japanese Journal of Applied Physics 10A, 6514 (2007)

Experimental Evidence for Weak Insulator-Quantum Hall Transitions in GaN/AlGaN Two-Dimensional Electron Systems

E. S. Kannan, G-H Kim*, J-Y Lin, J-H Chen, K. Y. Chen, Z-Y Zhang, C-T Liang, L-H Lin, D. H. Youn, K-Y Kang, and N. C. Chen

Journal of the Korean Physical Society 6, 1643 (2007)

Short range scattering effect of InAs quantum dots in the transport properties of two dimensional electron gas

E. S. Kannan, G-H Kim*, S. Kumar, I. Farrer, D. A. Ritchie, D. H. Youn, and K-Y Kang

Applied Physics Letters 90, 152110 (2007)

Formation of silicon oxide nanowires directly from Au/Si and Pd–Au/Si substrates

H-K Park, B. Yang, S-W Kim*, G-H Kim, D-H Youn, S-H Kim, and S-L Maeng

Physica E 37, 158 (2007)

2006 

Carrier dynamics of optical emission from two-dimensional electron gas in undoped AlGaN/GaN single heterojunctions

H. S. Kwack, Y. H. Cho*, G-H Kim, M. R. Park, D. H. Youn, S. B. Bae, K-S Lee, J. H. Lee, and J. H. Lee

Physica Status Solidi (C) 6, 2109 (2006)

Vertically Well-Aligned ZnO Nanowires on c-Al2O3 and GaN Substrates by Au Catalyst

H-K Park*, M. H. Oh, S-W Kim, G-H Kim, D-H Youn, S. Lee, S-H Kim, K-C Kim, and S-L Maeng

ETRI Journal 6, 787 (2006)

Magnetotransport Measurements on an AlGaN/GaN Two-Dimensional Electron System

J-Y Lin, J-H Chen, C-T Liang*, Y. F. Chen, G-H Kim, H. Park, D. H. Youn, C. M. Jeon, J. M. Baik, and J-L Lee

Journal of the Korean Physical Society 3, 1130 (2006)

Experimental Evidence for Drude-Boltzmann-Like Transport in a Two-Dimensional Electron Gas in an AlGaN/GaN Heterostructure

J-H Chen, J-Y Lin, J-K Tsai, H Park, G-H Kim, D. H. Youn, H-I Cho, E-J Lee, J-H Lee, C-T Liang*, and Y. F. Chen

Journal of the Korean Physical Society 6, 1539 (2006)

2005 

Transition behavior from uncoupled to coupled multiple stacked CdSe/ZnSe self-assembled quantum-dot arrays

T. W. Kim*, K. H. Yoo, G-H Kim, S. Lee, J. K. Furdyna, and M. Dobrowolska

Solid State Communications 133, 191 (2005)

Optical properties and carrier dynamics of two-dimensional electrons in AlGaN/GaN single heterostructures

H-S Kwack, Y-H Cho*, G-H Kim, M. R. Park, D. H. Youn, S. B. Bae, K-S Lee, J-H Lee, J-H Lee, T. W. Kim, T. W. Kang, and K. L. Wang

Applied Physics Letters 87, 041909 (2005)

Experimental determination of electron and hole sublevels in modulation-doped InAs/GaAs quantum dots

Y. D. Jang, J. S. Yim, D. Lee*, G-H Kim, C-T Liang, I. Farrer, and D. A. Ritchie

Applied Physics Letters 87, 232110 (2005)

Effects of Zeeman spin splitting on the modular symmetry in the quantum Hall effect

D. R. Hang*, R. B. Dunford, G-H Kim, H. D. Yeh, C. F. Huang, D. A. Ritchie, I. Farrer, Y. W. Zhang, C-T Liang, and Y. H. Chang

Microelectronics Journal 36, 469 (2005)

2004 

Upshift of the fractional quantum Hall plateaux: evidence for repulsive scattering for composite fermions

H. S. Wang, Y. H. Chiu, G-H Kim, C-T Liang*, M. Y. Simmons, and D. A. Ritchie

Physica E 22, 135 (2004)

Kinetic Analysis of Hole Migration Through DNA

Y. Lee, and G-H Kim*

Journal of the Korean Physical Society 4, 993 (2004)

Conventional and microwave-modulated Shubnikov–de Haas oscillations in GaN electron systems

J. R. Juang, D. R. Hang, T-Y Huang, W. K. Hung, Y. F. Chen, G-H Kim, M-G Lin, T-M Chen, C-T Liang*, Y. Lee, J-H Lee, and J-H Lee

Physica E 21, 631 (2004)

On the low-field insulator-quantum Hall conductor transitions

T-YuHuang, J. R. Juang, C. F. Huang, G-H Kim, C-P Huang, C-T Liang*, Y. H. Chang, Y. F. Chen, Y. Lee, and D. A. Ritchie

Physica E 22, 240 (2004)

Microwave-modulated Shubnikov–de Haas oscillations in a two-dimensional GaN electron gas

D. R. Hang, J. R. Juanga, T-Y Huang, C-T Liang*, W. K. Hung, Y. F. Chen, G-H Kim, Y. Lee, J-H Lee, J-H Lee, and C. F. Huang

Physica E 22, 578 (2004)

Transport and quantum lifetime dependence on electron density in gated GaAs/AlGaAs heterostructures

T-M Chen*, C-T Liang, M. Y. Simmons, G-H Kim, and D. A. Ritchie

Physica E 22, 312 (2004)

From localization to Landau quantization in a two-dimensional GaAs electron system containing self-assembled InAs quantum dots

G-H Kim*, C-T Liang, C. F. Huang, J. T. Nicholls, D. A. Ritchie, P. S. Kim, C. H. Oh, J. R. Juang, and Y. H. Chang

Physical Review B 69, 073311 (2004)

Small-signal modulation characteristics for 1.5 lm lattice-matched InGaNAs/GaAs and InGaAs/InP quantum well lasers

W-H Seo, C. O’Brien, J. F. Donegan*, Y. Lee, and G-H Kim

Optical and Quantum Electronics 36, 1147–1153 (2004)

2003 

Formation process and lattice parameter of InAs/GaAs quantum dots

M. D. Kim, H. S. Lee, J. Y. Lee, T. W. Kim*, K. H. Yoo, and G-H Kim

Journal of Materials Science Letters 22, 1767 (2003)

Spin-dependent transport in a dilute two-dimensional GaAs electron gas in an in-plane magnetic field

C-T Liang*, C. G. Smith, M. Y. Simmons, G-H Kim, D. A. Ritchie, and M. Pepper

Physica E 18, 141 (2003)

 

Insulator-quantum Hall transitions in two-dimensional electron gas containing self-assembled InAs dots

G-H Kim*, C-T Liang, C. F. Huang, M-H Lee, J. T. Nicholls, and D. A. Ritchie

Physica E 17, 292 (2003)

Transport Properties in Samples Containing InAs Self-Assembled Dots and Dashes

G-H Kim*, J. T. Nicholls, D. A. Ritchie, S. I. Khondaker, C-T Liang, and T. W. Kim

Journal of the Korean Physical Society  42, S454  (2003)

Transport in a gated Al0.18Ga0.82N/GaN electron system

J. R. Juang, T-Y Huang, T-M Chen, M-G Lin, G-H Kim, Y. Lee, C-T Liang*, D. R. Hang, Y. F. Chen, and J-I Chyi

Journal of Applied Physics 5, 3181 (2003)

Electrically detected and microwave-modulated Shubnikov–de Haas oscillations in an Al0.4Ga0.6N/GaN heterostructure

D. R. Hang, C-T Liang, J. R. Juang, T-Yu Huang, W. K. Hung, Y. F. Chen*, G-H Kim, J-H Lee, and J-H Lee

Journal of Applied Physics 4, 2055 (2003)

2002 

Self-Consistent Subband Calculations of AlGaN/GaN Single Heterojunctions

K-S Lee*, D-H Yoon, S-B Bae, M-R Park, and G-H Kim

ETRI Journal 4, 270 (2002)

Insulator–quantum Hall liquid transitions in a two-dimensional electron gas using self-assembled InAs dots

G-H Kim*, J. T. Nicholls, C-T Liang, D. A. Ritchie, and S. I. Khondaker

Physica E 12, 658 (2002)

Exchange-enhanced Landé g-factor, effective disorder and collapse of spin-splitting in a two-dimensional GaAs electron system

T-Y Huang, Y-M Cheng, C-T Liang*, G-H Kim, and J. Y. Leem

Physica E 12, 424 (2002)

Spin-dependent transport in a two-dimensional GaAs electron gas in a parallel magnetic field

Y-M Cheng, T-Y Huang, C. H. Pao, C-C Lee, C-T Liang*, M. Y. Simmons, C. G. Smith, D. A. Ritchie, M. Pepper, G-H Kim, and J. Y. Leem

Physica E 12, 41 (2002)

2001 

Coulomb charging effects in an open quantum dot device

O. A. Tkachenko, V. A. Tkachenko, D. G. Baksheyev, C-T Liang*, M. Y. Simmons, C. G. Smith, D. A. Ritchie, G-H Kim, and M. Pepper

Journal of Physics: Condensed Matter 13, 9515 (2001)

Quantum magneto-transport in two-dimensional GaAs electron gases and SiGe hole gases

C-T Liang*, Y-M Cheng, T-Y Huang, C. F. Huang, M. Y. Simmons, D. A. Ritchie, G-H Kim, J. Y. Leem, Y. H. Chang, and Y. F. Chen

Journal of Physics and Chemistry of Solids 62, 1789 (2001)

 

Coulomb Charging Effects in an Open Quantum Dot Device at Zero Magnetic Field

C-T Liang*, M. Y. Simmons, C. G. Smith, G-H Kim, D. A. Ritchie, and M. Pepper

The Japan Society of Applied Physics 40, 1936 (2001)

Transport in a Modulated One-Dimensional Ballistic Channel

C-T Liang*, M. Pepper, M. Y. Simmons, C. G. Smith, G-H Kim, and D. A. Ritchie

Chinese Journal of Physics 6, 533 (2001)

Spin-Dependent Transport in a Two-Dimensional GaAs Electron System

C-T Liang*, T-Y Huang, Y-M Cheng, C. H. Pao, C-C Lee, G-H Kim, and J. Y. Leem

Chinese Journal of Physics 4, 369 (2001)

Method of determining potential barrier heights at submonolayer AlAs/GaAs heterointerfaces

G-H Kim*, M. Y. Simmons, C-T Liang, D. A. Ritchie, A. C. Churchill, H-S Sim, K. J. Chang, G. Ihm, and N. Kim

Physical Review B 64, 165313 (2001)

 

Effective Potential Calculation in a Two-Dimensional Electron Gas Containing Quasi One-Dimensional AlAs Submonolayer

G-H Kim*, H-S Sim, M. Y. Simmons, C-T Liang, and D. A. Ritchie

Journal of the Korean Physical Society 39, S11 (2001)

Anisotropic Mobility of Two-Dimensional Electron Gases Containing Linearly Ordered InAs Self-Assembled Quantum Dots

G-H Kim*, D. A. Ritchie, C-T Liang, G. D. Lian, J. Yuan, and L. M. Brown

Journal of the Korean Physical Society 39 549 (2001)

Transport properties of two-dimensional electron gases containing linear ordering InAs self-assembled quantum dots

G-H Kim*, D. A. Ritchie, C-T Liang, G. D. Lian, J. Yuan, M. Pepper, and L. M. Brown

Applied Physics Letters 24, 3896 (2001)

2000 

 

Evidence for charging effects in an open dot at zero magnetic field

C-T Liang*, M. Y. Simmons, C. G. Smith, G-H Kim, D. A. Ritchie, and M. Pepper

Physica E 6, 418 (2000)

Multilayered gated lateral quantum dot devices

C-T Liang*, M. Y. Simmons, C. G. Smith, G-H Kim, D. A. Ritchie, and M. Pepper

Applied Physics Letters 9, 1134 (2000)

Tuning the insulator–quantum Hall liquid transitions in a two-dimensional electron gas using self-assembled InAs

G-H Kim*, J. T. Nicholls, S. I. Khondaker, I. Farrer, and D. A. Ritchie

Physical Review B 16, 10910 (2000)

Spin-dependent transport in a clean one-dimensional channel

C-T Liang*, M. Y. Simmons, C. G. Smith, G-H Kim, D. A. Ritchie, and M. Pepper

Physical Review B 15,  10687 (1999)

1998 

 

Experimental Evidence for Coulomb Charging Effects in an Open Quantum Dot at Zero Magnetic Field

C-T Liang*, M. Y. Simmons, C. G. Smith, G-H Kim, D. A. Ritchie, and M. Pepper

Physical Review Letters 16, 3507 (1998)

Modification of InAs quantum dot structure by the growth of the capping layer

G. D. Lian*, J. Yuan, L. M. Brown, G-H Kim, and D. A. Ritchie

Applied Physics Letters 1, 49 (1998)

Transport properties of two-dimensional electron gases containing InAs self-assembled dots

G-H Kim*, D. A. Ritchie, M. Pepper, G.D. Lian, J. Yuan, and L. M. Brown

Applied Physics Letters 17, 2468 (1998)

1995 

The growth of high mobility heterostructures on (311)B GaAs

M. Y. Simmons*, A. C. Churchill, G-H Kim, A. R. Hamilton, A. Kurobe, D. R. Mace, D. A. Ritchie, and M. Pepper

Microelectronics Journal 26, 879 (1995)

1994 

Electron focusing in two-dimensional electron gases grown on (311)B GaAs substrates

A. C. Churchill*, G-H Kim, M. Y. Simmons, D. A. Ritchie, and G. A. C. Jones

Physical Review B 23, 17636 (1994) 

Anisotropic magnetotransport in two-dimensional electron gases on (311)B GaAs substrates

A. C. Churchill*, G-H Kim, A. Kurobe, M. Y. Simmons, D. A. Ritchie, M. Pepper, and G. A. C. Jones

Journal of Physics: Condensed Matter 6, 6131 (1994).